SSFP5N60 starmos t power mosfet extremely high dv/dt capability low gate charge qg results in simple drive requirement 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatability description starmos is a new generation of high voltage n?channel enhancement mode power mosfets. this new technology minimises the jfet effect, increases packing density and reduces the on-resistance. starmos also achieves faster switching speeds through optimised gate layout with planar stripe dmos technology. application switching application absolute maximum ratings parameter max. units i d @tc=25 ? c continuous drain current,v gs @10v 4.5 i d @tc=100 ? c continuous drain current,v gs @10v 2.6 i dm pulsed drain current 18 a p d @t c =25 ? c power dissipation 100 w linear derating factor 0.8 w/ ? c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 210 mj i ar avalanche current 4.5 a e ar repetitive avalanche energy 10 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t j t stg operating junction and storage temperature range C 55 to +150 soldering temperature, for 10 seconds 300(1.6mm from case) ? c mounting torque,6-32 or m3 screw 10 ibf in(1.1n m) thermal resistance parameter min. typ. max. units r jc junction-to-case 1.25 r cs case-to-sink,flat,greased surface 0.50 r ja junction-to-ambient 62.5 ? c/w pin1?gate pin2?drain pin1?source v dss = 600v i d25 = 4.5a r ds(on) = 2.5 1
SSFP5N60 starmos t power mosfet electrical characteristics @t j =25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions v (br)dss drain-to-source breakdown voltage 600 v v gs =0v,i d = 250 a v (br)dss / t j breakdown voltage temp.coefficient 0.6 v/ ? c reference to 25 ? c,i d =250 a r ds(on) static drain-to-source on-resistance 2.0 2.5 v gs =10v,i d =2.25a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance 4.7 s v ds =40v,i d =2.25a 1 v ds =600v,v gs =0v i dss drain-to-source leakage current 10 a v ds =480v,v gs =0v,t j =150 ? c gate-to-source forward leakage 100 v gs =30v i gss gate-to-source reverse leakage -100 na v gs =-30v q g total gate charge 15 19 q gs gate-to-source charge 2.5 q gd gate-to-drain("miller") charge 6.6 nc i d =4.5a v ds =480v v gs =10v t d(on) turn-on delay time 10 30 t r rise time 42 90 t d(off) turn-off delay time 38 85 t f fall time 46 100 ns v dd =300v i d =4.5a r g =25 ? l d internal drain inductance 4.5 l s internal source inductance 7.5 nh between lead, 6mm(0.25in.) from package and center of die contact c iss input capacitance 515 670 c oss output capacitance 55 72 c rss reverse transfer capacitance 6.5 8.5 pf v gs =0v v ds =25v f =1.0mh z source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) 4.5 i sm pulsed source current . (body diode) 18 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.4 v t j =25 ? c,i s =4.5a,v gs =0v t rr reverse recovery time 300 ns q rr reverse recovery charge 2.2 nc t j =25 ? c,i f =4.5a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + l d ) notes: repetitive rating;pulse width limited by i sd 4.5a,di/dt 200a/ s,v dd v (br)dss , max.junction temperature(see figure 11) tj 25 ? c l = 18.9mh, ias =4.5 a, vdd = 50v, pulse width 300 s; duty cycle 2% rg = 25 , starting tj = 25c 2
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